| PART |
Description |
Maker |
| 1N5070 1N5075 1N5078 1N5100 1N5105 1N5103 1N5104 1 |
POWER ZENERS
45 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
180 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 160 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 36 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 14 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 16 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 30 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 18 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 33 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 56 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 100PF 100V 5% NP0(C0G) RAD.20 .20X.20 TR-13 20 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Power Zeners. 3 Watt 电源齐纳基准源3瓦特
POWER ZENERS 22 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 220 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
POWER ZENERS 320 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
FUSED-IN-GLASS METALLARGICALTY BONDED 3 WAIT ZENER DIODES
|
MICROSEMI CORP-SCOTTSDALE
TE Connectivity, Ltd.
Bourns, Inc.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
POWER ZENERS
|
| 1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount
Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR
Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http://
ONSEMI[ON Semiconductor]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| BDX53B BD53C BDX54C ON0205 BDX53C BDX54B |
From old datasheet system
8 AMPERE POWER TRANSISTORS
Plastic Medium-Power Complementary Silicon Transistors
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
|
Motorola Inc
MOTOROLA[Motorola Inc]
Motorola, Inc
ON Semiconductor
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
| 1N3664 1N3494 1N3493 1N3663 1N3491 1N3492 1N3495 S |
Silicon Power Rectifier
Standard Rectifier (trr more than 500ns)
Silicon Power Rectifier 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-208AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
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